Temperature-dependent mechanical-resonance frequencies and damping in ensembles of gallium nitride nanowires
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Experimental investigation of electron transport properties of gallium nitride nanowires
We report transport properties of gallium nitride GaN nanowires grown using direct reaction of ammonia and gallium vapor. Reliable devices, such as four-terminal resistivity measuring structures and field-effect transistors, were realized by dielectrophoretically aligning the nanowires on an oxidized silicon substrate and subsequently applying standard microfabrication techniques. Room-temperat...
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Nowadays, the semiconductor nanowires (NWs) typically used in hydrogen gas sensors. Gallium nitride (GaN) with a wide band gap of 3.4 eV, is one of the best semiconductors for this function. NWs surface roughness have important role in gas sensors performance. In this research, GaN NWs have been synthesized on Si substrate by plasma-assisted vapor phase deposition at different deposition time, ...
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